semiconductor group 01 / 1999 1 bso 307 n preliminary data sipmos small-signal-transistor features dual n channel enhancement mode avalanche rated logic level d v /d t rated product summary drain source voltage v ds 30 v drain-source on-state resistance r ds(on) 0.05 w continuous drain current i d 5 a type package ordering code bso 307 n so 8 q67000-s4012 continuous drain current, one channel active t a = 25 c i d 5 a pulsed drain current, one channel active t a = 25 c 20 i dpulse avalanche energy, single pulse i d = 5 a, v dd = 25 v, r gs = 25 w mj e as 55 avalanche current,periodic limited by t j max i ar 5 a avalanche energy, periodic limited by t j max mj e ar 0.2 reverse diode d v /d t i s = 5 a, v ds = 24 v, d i /d t = 200 a/s, t jmax = 150 c d v /d t 6 kv/s gate source voltage v v gs 20 power dissipation, one channel active t a = 25 c p tot 2 w operating temperature c t j -55...+150 storage temperature t st g -55 ... +150 iec climatic category; din iec 68-1 55/150/56 maximum ratings, at t j = 25 c, unless otherwise specified parameter symbol value unit
semiconductor group 01 / 1999 2 bso 307 n preliminary data thermal characteristics parameter symbol unit values typ. min. max. characteristics 35 k/w r thjs - - thermal resistance, junction - soldering point 100 r th ( ja ) - thermal resistance @ 10 sec., min. footprint - 62.5 r th(ja) - - thermal resistance @ 10 sec., 6 cm 2 cooling area 1) electrical characteristics, at t j = 25 c, unless otherwise specified parameter values symbol unit typ. min. max. static characteristics drain- source breakdown voltage v gs = 0 v, i d = 0.25 ma, t j = 25 c v (br)dss 30 - - v gate threshold voltage, v gs = v ds i d = 20 a v gs(th) 1.2 1.6 2 zero gate voltage drain current v ds = 30 v, v gs = 0 v, t j = 25 c v ds = 30 v, v gs = 0 v, t j = 150 c i dss - - 0.1 10 1 100 a gate-source leakage current v gs = 20 v, v ds = 0 v i gss - 10 100 na drain-source on-state resistance v gs = 4.5 v, i d = 4.1 a v gs = 10 v, i d = 5 a r ds(on) - - 0.05 0.035 0.075 0.05 w 1 device on 40mm*40mm*1.5mm epoxy pcb fr4 with 6 cm2 (one layer, 70m thick) copper area for drain connection. pcb is vertical without blown air.
semiconductor group 01 / 19993 bso 307 n preliminary data electrical characteristics parameter values symbol unit max. min. typ. characteristics s transconductance v ds 3 2* i d * r ds(on)max , i d = 4.1 a 6 - 2 g fs pf c iss input capacitance v gs = 0 v, v ds = 25 v, f = 1 mhz - 500 400 output capacitance v gs = 0 v, v ds = 25 v, f = 1 mhz 160 - c oss 200 reverse transfer capacitance v gs = 0 v, v ds = 25 v, f = 1 mhz c rss - 90 70 - n s turn-on delay time v dd = 15 v, v gs = 4.5 v, i d = 4.1 a, r g = 16 w t d(on) 33 22 33 t r rise time v dd = 15 v, v gs = 4.5 v, i d = 4.1 a, r g = 16 w n s - 22 33 turn-off delay time v dd = 15 v, v gs = 4.5 v, i d = 4.1 a, r g = 16 w t d(off) ns 22 - 38 fall time v dd = 15 v, v gs = 4.5 v, i d = 4.1 a, r g = 16 w - t f n s 25
semiconductor group 01 / 1999 4 bso 307 n preliminary data electrical characteristics, at t j = 25 c, unless otherwise specified parameter symbol values unit at t j = 25 c, unless otherwise specified min. typ. max. dynamic characteristics gate charge at threshold v dd = 15 v, i d = 0.1 a, v gs = 0 to 1 v q g(th) - 0.4 0.6 nc gate charge at v gs =5v v dd = 15 v, i d = 4.1 a, v gs = 0 to 5 v q g(5) - 8 12 gate charge total v dd = 15 v, i d = 4.1 a, v gs = 0 to 10 v q g - 13 20 nc gate plateau voltage v dd = 15 v, i d = 4.1 a v (plateau) - 3.2 - v reverse diode inverse diode continuous forward current t a = 25 c i s - - 5 a inverse diode direct current,pulsed t a = 25 c i sm - - 20 inverse diode forward voltage v gs = 0 v, i f = 10 a v sd - 0.85 1.4 v reverse recovery time v r = 15 v, i f = i s , d i f /d t = 100 a/s t rr - 25 38 ns reverse recovery charge v r = 15 v, i f = l s , d i f /d t = 100 a/s q rr - 20 30 c
semiconductor group 01 / 1999 5 bso 307 n preliminary data drain current i d = f ( t a ) 0 20 40 60 80 100 120 c 160 t a 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 a 5.5 bso 307 n i d power dissipation p tot = f ( t a ) 0 20 40 60 80 100 120 c 160 t a 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 w 2.4 bso 307 n p tot safe operating area i d = f ( v ds ) parameter : d = 0 , t a = 25 c 10 -1 10 0 10 1 10 2 v v ds -2 10 -1 10 0 10 1 10 2 10 a bso 307 n i d r d s ( on) = v d s / i d dc 10 ms 1 ms 100 s 10 s t p = 6.0 s transient thermal impedance z thja = f (t p ) parameter : d = t p / t 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 4 s t p -1 10 0 10 1 10 2 10 k/w bso 307 n z thja single pulse 0.01 0.02 0.05 0.10 0.20 d = 0.50
semiconductor group 01 / 1999 6 bso 307 n preliminary data typ. output characteristics i d = f ( v ds ) parameter: t p = 80 s 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 v 5.0 v ds 0 1 2 3 4 5 6 7 8 9 10 a 12 bso 307 n i d v gs [v] a a 2.5 b b 3.0 c c 3.5 d d 4.0 e e 4.5 f f 5.0 g g 5.5 h h 6.0 i i 6.5 j j 7.0 k k 8.0 l p tot = 2 w l 10.0 drain-source on-resistance r ds(on) = f ( t j ) parameter : i d = 4.1 a, v gs = 4.5 v -60 -20 20 60 100 c 180 t j 0.00 0.02 0.04 0.06 0.08 0.10 0.12 0.14 w 0.18 bso 307 n r ds(on) typ 98% typ. capacitances c = f (v ds ) parameter: v gs = 0 v, f = 1 mhz 0 5 10 15 20 25 30 v 40 vds 1 10 2 10 3 10 pf c ciss coss crss
semiconductor group 01 / 1999 7 bso 307 n preliminary data typ. transfer characteristics i d = f ( v gs ) parameter: t p = 80 s v ds 3 2 x i d x r ds(on) max 1.8 2.0 2.2 2.5 2.8 3.0 3.2 3.5 v 4.0 v gs 0 1 2 3 4 5 6 7 8 9 10 a 12 i d gate threshold voltage v gs(th) = f ( t j ) parameter : v gs = v ds , i d = 20 a -60 -20 20 60 100 v 160 t j 0.0 0.4 0.8 1.2 1.6 2.0 2.4 v 3.2 v gs(th) min typ max forward characteristics of reverse diode i f = f ( v sd ) parameter: t j , t p = 80 s 0.0 0.4 0.8 1.2 1.6 2.0 2.4 v 3.0 v sd -1 10 0 10 1 10 2 10 a bso 307 n i f t j = 25 c typ t j = 25 c (98%) t j = 150 c typ t j = 150 c (98%)
semiconductor group 01 / 1999 8 bso 307 n preliminary data avalanche energy e as = f ( t j ) parameter: i d = 5 a, v dd = 25 v r gs = 25 w 20 40 60 80 100 120 c 160 t j 0 10 20 30 40 mj 60 e as typ. gate charge v gs = f ( q gate ) parameter: i d puls = 4.1 a 0 2 4 6 8 10 12 14 16 nc 19 q gate 0 2 4 6 8 10 12 v 16 bso 307 n v gs ds max v 0,8 ds max v 0,2 drain-source breakdown voltage v (br)dss = f ( t j ) 0 20 40 60 80 100 120 c 160 t j 27 28 29 30 31 32 33 34 35 v 37 bso 307 n v (br)dss
semiconductor group 01 / 1999 9 bso 307 n preliminary data edition 01 / 1999 published by siemens ag, bereich halbleiter vetrieb, werbung, balanstra?e 73, 81541 mnchen ? siemens ag 1997 all rights reserved. attention please! as far as patents or other rights of third parties are concerned, liability is only assumed for components, not for applications, processes and circuits implemented within components or assemblies. the information describes a type of component and shall not be considered as warranted characteristics. terms of delivery and rights to change design reserved. for questions on technology, delivery and prices please contact the semiconductor group offices in germany or the siemens companies and representatives worldwide (see address list). due to technical requirements components may contain dangerous substances. for information on the types in question please contact your nearest siemens office, semiconductor group. siemens ag is an approved cecc manufacturer. packing please use the recycling operators known to you. we can also help you - get in touch with your nearest sales office. by agreement we will take packing material back, if it is sorted. you must bear the costs of transport. for packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. components used in life-support devices or systems must be expressly authorized for such purpose! critical components 1 of the semiconductor group of siemens ag, may only be used in life-support devices or systems 2 with the express written approval of the semiconductor group of siemens ag. 1)a critical component is a component used in a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system. 2)life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain and sustain and/or protecf human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
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